2SC5435

PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) Contains same chip as 2SC5010 PACKAGE DIMENSIONS (in mm) 1.4 ± 0.05 0.8 ± 0.1 1.4 ± 0.1 (0.9) 0.45 0.45 0.2 +0.1 –0 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 9 6 2 30 125 150 –65 to +150 UNIT V V TK 3 1 mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Reverse Transfer Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e|2 NF TEST CONDITIONS VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 10 mANote 1 VCE = 3 V, IC = 10 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHzNote 2 VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 3 mA, f = 2 GHz PIN CONNECTIONS 1: Emitter 2: Base 3: Collector MIN. TYP. MAX. 100 100 UNIT nA nA 75 12.0 0.4 7.0 8.5 1.5 140 GHz 0.7 pF dB 2.5 dB Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 % 2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. Because this product uses high-frequency process, avoid e...