PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5432
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIF...
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5432
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FEATURE
Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) Contains same chip as 2SC5006
PACKAGE DIMENSIONS (in mm)
1.4 ± 0.05 0.8 ± 0.1
1.4 ± 0.1 (0.9) 0.45 0.45
0.2 +0.1 –0
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER Collector to Base
Voltage Collector to Emitter
Voltage Emitter to Base
Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 20 12 3 100 125 150 –65 to +150 UNIT V V
TC
3
1
0.59 ± 0.05
V mA mW °C °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Reverse Transfer Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e| NF
2
PIN CONNECTIONS 1: Emitter 2: Base 3: Collector
TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 7 mANote 1
MIN.
TYP.
MAX. 1000 1000
UNIT nA nA
80 3.0 4.5 0.7 7.0 10.0 1.4
145 GHz 1.5 pF dB 2.5 dB
VCE = 3 V, IC = 7 mA, f = 1 GHz VCB = 3 V, IE = 0, f = 1 MHzNote 2
VCE = 3 V, IC = 7 mA, f = 1 GHz VCE = 3 V, IC = 7 mA, f = 1 GHz
Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 % 2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
Because this product uses hig...