2SC5431

PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5431 NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FEATURE Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) Contains same chip as 2SC5004 PACKAGE DIMENSIONS (in mm) 1.4 ± 0.05 0.8 ± 0.1 1.4 ± 0.1 (0.9) 0.45 0.45 0.2 +0.1 –0 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 20 12 3 60 100 125 –65 to +125 UNIT V V TA 3 1 0.59 ± 0.05 V mA mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Collector Cut-off Current Emitter Cut-off Current Collector to Emitter Saturation Voltage DC Current Gain Gain Bandwidth Product Reverse Transfer Capacitance Insertion Power Gain SYMBOL ICBO IEBO VCE (sat) TEST CONDITIONS VCB = 15 V, IE = 0 VEB = 1 V, IC = 0 hFE = 10, IC = 5 mA VCE = 5 V, IC = 5 mANote 1 VCE = 5 V, IC = 5 mA, f = 1 GHz VCB = 5 V, IE = 0, f = 1 2 PIN CONNECTIONS 1: Emitter 2: Base 3: Collector MIN. TYP. MAX. 100 100 0.5 UNIT nA nA V hFE fT Cre |S21e| 60 3.0 4.3 0.6 5.0 120 GHz 1.2 pF dB MHzNote 2 VCE = 5 V, IC = 5 mA, f = 1 GHz Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 % 2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. Because this product uses high-frequency ...