PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5409
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
FEATURE
High fT 16 GHz TYP. High gain |S21e|2 = 14 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA 6-pin Small Mini Mold Package
PACKAGE DIMENSIONS (in mm)
2.1±0.1 1.25±0.1 0.2 +0.1 –0 0....
