2SC5405

Power Transistors 2SC5405 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit: mm s Features q q 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 q High-speed switching High forward current transfer ratio hFE which has satisfactory linearity Dielectric breakdown voltage of the package: > 5kV (TC=25˚C) Ratings 80 50 6 6 3 1 20 2.0 150 –55 to +150 Unit V V V A A A W ˚C ˚C 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 1.4±0.2 1.6±0.2 0.8±0.1 2.54±0.3 3 5.08±0.5 2.6±0.1 0.55±0.15 1 2 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE * Conditions VCB = 80V, IE = 0 VCE = 40V, IB = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A, f = 10MHz IC = 1A, IB1 = 0.05A, IB2 = – 0.1A, VCC = 50V min typ max 100 100 100 Unit µA µA µA V 50 500 0.5 1500 0.7 VCE(sat) VBE(sat) fT ton ts...