2SC5376

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications 2SC5376 Unit: mm Low collector saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA High collector current: IC = 400 mA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 400 mA Base current IB 50 mA Collector power dissipation Junction temperature Storage temperature range PC 100 mW Tj 125 °C Tstg −55 to 125 °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-2H1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 2.4 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Start of commercial production 1997-05 1 2014-03-01 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current g...