isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5353
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VC...
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5353
DESCRIPTION ·Collector–Emitter Sustaining
Voltage
: VCEO(SUS) = 800V(Min.) ·Low Collector Saturation
Voltage
: VCE(sat) =1V(Max) @ IC= 1.2A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in lighting applications and low cost
switch-mode power supplies
.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Emitter
Voltage
900
V
VCEO Collector-Emitter
Voltage
800
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-peak tp<5ms
5
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
TC=25℃ Collector Power Dissipation
Ta=25℃
Ti
Junction Temperature
1
A
25
W
2
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.com
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5353
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector -Base Breakdown
Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector - Emitter Breakdown
Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage
IC= 1.2A; IB= 0.24A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 1.2A; IB= 0.24A
ICBO
Collector Cutoff Current
VCE=720V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 1mA; VCE= 5V
hFE-2
DC Current Gain...