Semiconductor
2SC5342UF
NPN Silicon Transistor
Description
• Medium power amplifier
Features
• Large collector curren...
Semiconductor
2SC5342UF
NPN Silicon Transistor
Description
Medium power amplifier
Features
Large collector current : IC=500mA Low collector saturation
voltage enabling low-
voltage operation Complementary pair with 2SA1979UF
Ordering Information
Type NO. 2SC5342UF Marking B : hFE rank Package Code SOT-323F
Outline Dimensions
2.0~2.2 0.30~0.40 1.2~1.4
unit : mm
1.30 BSC
1.9~2.1
1 3 2
0.06~0.16
0~0.1
0.55~0.8
PIN Connections 1. Base 2. Emitter 3. Collector
KST-3031-002
1
2SC5342UF
Absolute maximum ratings
Characteristic
Collector-Base
voltage Collector-Emitter
voltage Emitter-Base
voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
40 32 5 500 200 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown
voltage Collector-Emitter breakdown
voltage Emitter-Base breakdown
voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation
voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE fT Cob
*
Test Condition
IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA IC=100mA, IB=10mA VCE=6V, IE=-20mA VCB=6V, IE=0, f=1MHz
Min. Typ. Max.
40 32 5 70 300 7.0 0.1 0.1 240 0.25 -
Unit
V V V µA µA V MHz pF
VCE(sat)
* : hFE Rank / O : 70~140, Y : 120~240
KST-3031-002
2
2SC5342UF
Electrical Character...