2SC5336

PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES PACKAGE DIMENSIONS (in millimeters) 4.5±0.1 1.6±0.2 1.5±0.1 High gain 2 | S21 | = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA New power mini-mold package version of a 4-pin type gain-improved on the 2SC3357 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature 2 Symbol VCBO VCEO VEBO IC Note1 PT Rating 20 12 3.0 100 1.2 150 –65 to +150 Unit 0.8MIN. C E B E V V V mA W °C °C 0.42 ±0.06 1.5 3.0 0.46 ±0.06 0.42 ±0.06 3.95±0.25 2.45±0.1 0.25±0.02 Tj Tstg Note 1. 0.7 mm × 16 cm double sided ceramic substrate (Copper plating) ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-back Capacitance Insertion Power Gain Noise Figure Noise Figure Symbol ICB0 IEB0 hFE fT Cre | S21e | NF NF 2 PIN CONNECTIONS E: Emitter C: Collector B: Base Test Conditions VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz Note3 Note2 MIN. TYP. MAX. 1.0 1.0 Unit µA µA 50 120 6.5 0.5 12.0 1.1 1.8 250 GHz 0.8 pF dB dB 3.0 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 7 mA, f = 1.0 GHz VCE = 10 V, IC = 40 mA, f = 1.0 GHz Notes 2. Pu...