DatasheetsPDF.com

2SC5333 Datasheet

Part Number 2SC5333
Manufacturers Sanken electric
Logo Sanken electric
Description NPN TRANSISTOR
Datasheet 2SC5333 Datasheet2SC5333 Datasheet (PDF)

2SC5333 Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5333 300 300 6 2 0.2 35(Tc=25°C) 150 –55to+150 Unit V V V A A W °C °C 2.54 2.2±0.2 Application : Series Regulator, Switch, and General Purpose (Ta=25°C) 2SC5333 1.0max 1.0max 300min 30min 1.0max 10typ 75typ V MHz pF 13.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=300V VEB=6V IC=25mA VCE=4V, IC=0.5A IC=1.0A, IB=0.2A .

  2SC5333   2SC5333






Part Number 2SC5339
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC5333 Datasheet2SC5339 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- :VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal output applications for medium resolution display & color TV. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V .

  2SC5333   2SC5333







Part Number 2SC5339
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC5333 Datasheet2SC5339 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5339 www.datasheet4u.com DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for medium resolution display,color TV ·High speed switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM I.

  2SC5333   2SC5333







Part Number 2SC5339
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5333 Datasheet2SC5339 Datasheet (PDF)

2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5339 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS Unit: mm l High Voltage : VCBO = 1500 V l Low Saturation Voltage : VCE (sat) = 5 V (Max.) l High Speed : tf = 0.2 µs (Typ.) l Bult−in Damper Type l Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base V.

  2SC5333   2SC5333







Part Number 2SC5338
Manufacturers Renesas
Logo Renesas
Description NPN SILICON RF TRANSISTOR
Datasheet 2SC5333 Datasheet2SC5338 Datasheet (PDF)

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: .

  2SC5333   2SC5333







Part Number 2SC5338
Manufacturers NEC
Logo NEC
Description NPN TRANSISTOR
Datasheet 2SC5333 Datasheet2SC5338 Datasheet (PDF)

DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5338 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5338 is designed for a low distortion and low noise RF amplifier with an operation on the low supply voltage (VCE = 5 V). This low distortion characteristics is suitable for the CATV, tele-communication, and such. FEATURES • PACKAGE DIMENSIONS (in millimeters) 4.5±0.1 1.6±0.2 1.5±0.1 High gain |S21 | = 10 dB TYP., @VCE = 5 V, Ic = 50 mA, f.

  2SC5333   2SC5333







NPN TRANSISTOR

2SC5333 Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5333 300 300 6 2 0.2 35(Tc=25°C) 150 –55to+150 Unit V V V A A W °C °C 2.54 2.2±0.2 Application : Series Regulator, Switch, and General Purpose (Ta=25°C) 2SC5333 1.0max 1.0max 300min 30min 1.0max 10typ 75typ V MHz pF 13.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=300V VEB=6V IC=25mA VCE=4V, IC=0.5A IC=1.0A, IB=0.2A VCE=12V, IE=–0.2A VCB=10V, f=1MHz External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 Unit mA V 16.9±0.3 8.4±0.2 mA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 100 RL (Ω) 100 IC (A) 1.0 VB2 (V) –5 IB1 (A) 0.1 IB2 (A) –0.2 ton (µs) 0.3typ tstg (µs) 4.0typ tf (µs) 1.0typ 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 200 B= mA V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) 2 (V CE =4V) 2 I Collector Current I C (A) 2 Collector Current I C (A) mp) e Te I B =2 0m 25˚C (C 125˚C 1 (Cas A /s to p I C =1A 0 0 0.1 0.2 2A 0.3 0 0 0.2 0.4 0.6 0.8 1.0 0 0 1 2 3 4 Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V) h FE – I C Characteristics (Typical) (V C E =4V.


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)