2SC5322FT

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322FT 2SC5322FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: |S21e|2 = 10dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 5 1.5 10 5 100 125 −55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT S21e2 (1) S21e2 (2) NF (1) NF (2) VCE = 3 V, IC = 7 mA VCE = 3 V, IC = 7 mA, f = 1 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz VCE = 3 V, IC = 3 mA, f = 1 GHz VCE = 3 V, IC = 3 mA, f = 2 GHz Min Typ. Max Unit 9   GHz 12.5 7 15.5 10   dB  0.9 1.8 dB  1.4 2.2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 8 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 7 mA VCB = 2.5 V, IE = 0, f = 1 MHz (Note)   50    1 µA  1 µA  250 0.4  pF 0.3 0.7 pF Note: Cre is measured by 3 terminal method with capacitance bridge. 1 2003-07-31 Caution This device elec...