2SC5301

Ordering number:EN5417A NPN Triple Diffused Planar Silicon Transistor 2SC5301 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2111A [2SC5301] 20.0 5.0 20.7 26.0 2.8 3.0 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C 1.75 2.9 1.2 12 3 5.45 5.45 0.6 5.45 5.45 1.0 3.1 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3JML Conditions Ratings 1500 800 6 20 40 4.6 120 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain Symbol Conditions ICES VCEO(sus) IEBO ICBO hFE1 hFE2 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 VCB=800V, IE=0 VCE=5V, IC=1.0A VCE=5V, IC=16A Ratings min typ max Unit 1.0 mA 800 V 1.0 mA 10 µA 20 30 47 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, air...