2SC5298

Ordering number : EN5292 NPN Triple Diffused Planar Silicon Transistor 2SC5298 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features High Speed : tf=100ns typ. High Breakdown voltage : VCBO=1500V. High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Package Dimensions unit: mm 2039C-TO3PML [2SC5298] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1 : Base 2 : Collector 3 : Emitter SANYO: TO3PML Tc=25°C Ratings 1500 800 6 10 25 3.0 70 150 –55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current C-E Saturation Voltage B-E Saturation Voltage DC Current Gain Storage Time Fall Time Symbol ICBO ICES VCEO(SUS) IEBO VCE(sat) VBE(sat) hFE(1) hFE(2) tstg tf Conditions VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=8A, IB=2A IC=8A, IB=2A VCE=5V, IC=1A VCE=5V, IC=8A IC=6A, IB1=1.2A, IB2=–2.4A IC=6A, IB1=1.2A, IB2=–2.4A Ratings min typ max 10 1.0 130 5 1.5 25 7 3.0 0.2 Unit µA mA V mA V V 800 40 15 4 0.1 µs µs SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, U...