2SC5270

Power Transistors 2SC5270, 2SC5270A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1600 1500 1600 600 5 20 12 8 120 3 150 –55 to +150 Unit 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to base voltage 2SC5270 2SC5270A 2SC5270 2SC5270A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 5.45±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5.5±0.3 V 5° V 1 2 3 2.0 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature V V A A A W ˚C ˚C 1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package s Electrical Characteristics Parameter 2SC5270 Collector cutoff current 2SC5270A 2SC5270 2SC5270A Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time (TC=25˚C) Symbol Conditions VCB = 1000V, IE = 0 ICBO VCB = 1500V, IE = 0 VCB = 1600V, IE = 0 IEBO hFE VCE(sat) VBE(sat) fT tstg tf VEB = 5V, IC = 0 VCE = 5V, IC = 6A IC = 6A, IB = 1.5A IC = 6A, IB = 1.5A VCE = 10V, IC = 0.1A, f =...