2SC5231

Ordering number:EN5036B NPN Epitaxial Planar Silicon Transistor 2SC5231 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. · Very small-sized package permiting 2SC5231- applied sets to be made small and slim. Package Dimensions unit:mm 2106A [2SC5231] 0.3 0.75 0.6 0 to 0.1 0.4 0.8 0.4 1.6 0.1max 0.5 0.5 1.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE fT Cob Reverse Transfer Capacitance Cre ≠ : Pulse Test Pulse Width≤2ms * : The 2SC5231 is classified by 20mA hFE as follows : VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=20mA VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz Marking C7 C8 C9 hFE 60 to 120 90 to 180 135 to 270 0.2 0.1 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Ratings 20 10 2 70 100 150 –55 to +150 Unit V V V mA mW ˚C ˚C Ratings min typ max Unit 1.0 µA 10 µA 60* 270* 57 GHz 0.7 1.2 pF 0.45 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifi...