Ordering number:EN5046
NPN Epitaxial Planar Silicon Transistor
2SC5230
VHF to UHF Wide-Band Low-Noise Amplifier Applica...
Ordering number:EN5046
NPN Epitaxial Planar Silicon Transistor
2SC5230
VHF to UHF Wide-Band Low-Noise Amplifier Applications
Features
· Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=6.5GHz typ.
Package Dimensions
unit:mm
2004B
[2SC5230]
5.0 4.0
4.0
0.6 2.0 14.0 5.0
0.45 0.5
0.45
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1.3
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain
ICBO IEBO hFE
fT Cob
Cre
| S21e |2
Noise Figure
NF
* : The 2SC5230 is classified by 20mA hFE as follows : 60 hFE rank : D, E, F
VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=20mA VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz VCE=5V, IC=7mA, f=1GHz
D 120 90 E 180 135 F
270
1.3
0.44
1 : Base 2 : Emitter 3 : Collector SANYO : NP JEDEC : TO-92 EIAJ : SC-43
Ratings 20 10 2 70
400 150 –55 to +150
Unit V V V mA
mW ˚C ˚C
Ratings min typ
60* 4.5 6.5
0.85 0.55 8 10.5
1.0
max 1.0 10
270*
1.3
1.8
Unit
µA µA
GHz pF pF dB dB
Any and all SANYO products described or contained herein do not have specifications that c...