2SC5226

Ordering number:EN5032A NPN Epitaxial Planar Silicon Transistor 2SC5226 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. 0.425 Package Dimensions unit:mm 2059B [2SC5226] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 Specifications 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=10V, IE=0 Emitter Cutoff Current DC Current Gain IEBO hFE VEB=1V, IC=0 VCE=5V, IC=20mA Gain-Bandwidth Product fT VCE=5V, IC=20mA Output Capacitance Cob VCB=10V, f=1MHz Reverse Transfer Capacitance Forward Transfer Gain Cre | S21e |2(1) | S21e |2(2) VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz VCE=2V, IC=3mA, f=1GHz Noise Figure NF VCE=5V, IC=7mA, f=1GHz * : The 2SC5226 is classified by 20mA hFE as follows : 60 3 120 90 4 180 135 5 270 Ratings 20 10 2 70 150 150 –55 to +150 Unit V V V mA mW ˚C ˚C Ratings min typ 60* 57 0.75 0.5 9 12 8 1.0 Marking : LN hFE rank : 3, 4, 5 max 1.0 10 270* 1.2 1.8 Unit µA µA GHz pF pF dB dB dB Any and all SANYO products described or conta...