2SC5216

Transistor 2SC5216 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm +0.2 2.8 –0.3 s Features q q 0.65±0.15 1.5 –0.05 +0.25 0.65±0.15 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg +0.2 1.1 –0.1 (Ta=25˚C) Ratings 15 8 3 50 200 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : FB s Electrical Characteristics Parameter Emitter cutoff current Collector to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Collector output capacitance Common emitter reverse transfer capacitance Power gain hFE ratio (Ta=25˚C) Symbol IEBO VCBO hFE VCE(sat) VBE fT Cob Crb PG hFE(RATIO) Conditions VEB = 2V, IC = 0 IC = 100µA, IE = 0 VCE = 4V, IC = 2mA IC = 20mA, IB = 4mA VCE = 4V, IC = 2mA VCB = 10V, IE = –15mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCB = 6V, IE = 0, f = 1MHz VCB = 10V, IE = –10mA, f = 200MHz VCE = 4V, IC = 100µA VCE = 4V, IC = 2mA 14 0.6 0.8 0.6 0.7 1.3 1.0 0.4 18 22 1.5 1.9 1.4 15 100 350 0.5 V V GHz pF pF dB min typ max 2 Unit µA V 0 to 0.1 0.1 to 0.3 0.4±0.2 0.8 0.16 –0.06 +0.1 0.4 –0.05 +0.1 High transition frequency fT. Mini type package, allowing downsizing of the eq...