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2SC5201
NPN TRANSISTOR
Description
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-
Voltage
Switching Applications 2SC5201 Unit: mm High breakdown
voltage
: VCEO = 600 V Low saturation
voltage
: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base
voltage
Collector-emitter volta...
Toshiba Semiconductor
Download 2SC5201 Datasheet
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