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2SC5196 Datasheet

Part Number 2SC5196
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5196 Datasheet2SC5196 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5196 Power Amplifier Applications 2SC5196 Unit: mm • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) VCBO VCEO VEBO IC IB PC 80 V 80 V 5V 6A 0.6 A 60 W Junction temperature.

  2SC5196   2SC5196






Part Number 2SC5196
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC5196 Datasheet2SC5196 Datasheet (PDF)

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5196 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1939 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Coll.

  2SC5196   2SC5196







Part Number 2SC5196
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC5196 Datasheet2SC5196 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5196 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 5A ·Good Linearity of hFE ·Complement to Type 2SA1939 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO.

  2SC5196   2SC5196







NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5196 Power Amplifier Applications 2SC5196 Unit: mm • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) VCBO VCEO VEBO IC IB PC 80 V 80 V 5V 6A 0.6 A 60 W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA TOSHIBA ― 2-16C1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 4.7 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency C.


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


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