2SC5195

DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current PACKAGE DRAWINGS (Unit: mm) 1.6±0.1 0.8±0.1 2 0.5 0.5 1.6±0.1 1.0 0.2 –0 +0.1 IC = 100 mA Supercompact Mini Mold Package 3 ORDERING INFORMATION PART NUMBER 2SC5195 QUANTITY In-bulk products (50 pcs.) Taped products (3 Kpcs/Reel) PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Collector) face to perforation side of the tape. 1 0.75±0.05 0.6 2SC5195-T1 Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 9 6 2 100 125 150 –65 to +150 UNIT V V V mA mW ˚C ˚C PIN CONNECTIONS 1. Emitter 2. Base 3. Collector This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity. Document No. P10398EJ2V0DS00 (2nd edition) (Previous No. TD-2488) Date Published August 1995 P Printed in Japan © 0 to 0.1 0.15 –0.05 +0.1 0.3 –0 +0.1 88 1994 2SC5195 ELECTRICAL CHARACTERISTICS (...