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2SC5178 Datasheet

Part Number 2SC5178
Manufacturers NEC
Logo NEC
Description NPN TRANSISTOR
Datasheet 2SC5178 Datasheet2SC5178 Datasheet (PDF)

DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain |S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 0.4 –0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 0.4 –0.05 0.16 –0.06 +0.1 EIAJ: SC-61 2.9±0.2 (1.8) 0.850.95 2 PART NUMBER 2SC5178-T1 0.6 –0.05 1 4 5° 0 to 0.1 5° QUANTITY 3000 units/reel ARR.

  2SC5178   2SC5178






Part Number 2SC5179
Manufacturers NEC
Logo NEC
Description NPN TRANSISTOR
Datasheet 2SC5178 Datasheet2SC5179 Datasheet (PDF)

DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Small Mini-Mold package EIAJ: SC-70 PACKAGE DIMENSIONS (Units: mm) 2.1±0.1 1.25±0.1 2.0±0.2 +0.1 0.3 –0 0.65 ORDERING INFORMATION PART NUMBER 2SC5179-T1 QUANTITY ARRANGEMENT Embossed tape, 8 mm wi.

  2SC5178   2SC5178







Part Number 2SC5177
Manufacturers NEC
Logo NEC
Description NPN TRANSISTOR
Datasheet 2SC5178 Datasheet2SC5177 Datasheet (PDF)

DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Current Consumption and High Gain |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 0.4 –0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 –0.15 +0.1 • Mini-Mold package EIAJ: SC-59 0.95 ORDERING INFORMATION PART NUMBER 2SC5177-T1 QUANTITY 3 000 units/reel ARRANGEMENT Embossed .

  2SC5178   2SC5178







Part Number 2SC5176
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5178 Datasheet2SC5176 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5176 High-Current Switching Applications DC-DC Converter Applications 2SC5176 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction .

  2SC5178   2SC5178







Part Number 2SC5175
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5178 Datasheet2SC5175 Datasheet (PDF)

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  2SC5178   2SC5178







NPN TRANSISTOR

DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain |S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 0.4 –0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 0.4 –0.05 0.16 –0.06 +0.1 EIAJ: SC-61 2.9±0.2 (1.8) 0.850.95 2 PART NUMBER 2SC5178-T1 0.6 –0.05 1 4 5° 0 to 0.1 5° QUANTITY 3000 units/reel ARRANGEMENT Embossed tape, 8 mm wide, pins No. 3 (base) and No. 4 (emitter) facing the perforations Embossed tape, 8 mm wide, pins No. 1 (collector) and No. 2 (emitter) facing the perforations 1.1 –0.1 +0.2 +0.1 5° 0.8 2SC5178-T2 3000 units/reel 5° * Contact your NEC sales representatives to order samples for evaluation (available in batches of 50). PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 5 3 2 10 30 150 –65 to +150 V V V mA mW °C °C CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity. Document No. P12102EJ2V0DS00 (2nd edition) (Previous No. TC-2475) Date Published November 1996 N Printed in Japan © 0.4 +0.1 –0.05 (1.9) ORDER.


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


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