Power Transistors
2SC5145
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
10.0...
Power Transistors
2SC5145
Silicon NPN triple diffusion planar type
For high breakdown
voltage high-speed switching
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q q
High-speed switching High collector to base
voltage VCBO Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 800 800 500 8 10 5 3 40 1.3 150 –55 to +150 Unit V V V
1.5max.
1.1max.
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2 6.0±0.3
10.0±0.3
V A A A W ˚C ˚C
1.5–0.4
2.0
3.0–0.2
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.08±0.5
1
2
3
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter
voltage Forward current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage Transition frequency Turn-on time Storage time Fall time
*V CEO(sus)
(TC=25˚C)
Symbol ICBO IEBO VCEO(sus) hFE1 hFE2 VCE(sat) VBE(sat) fT ton tst...