2SC5107

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 2SC5107 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 V 10 V 3 V 15 mA 30 mA 100 mW 125 °C −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC ― operating temperature/current/voltage, etc.) are within the JEITA SC-70 absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 2-2E1A Toshiba Semiconductor Reliability Handbook (“Handling Weight: 6 mg (typ.) Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1993-10 1 2014-03-01 2SC5107 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Output capacitance Reverse transfer capacitance Collector-base time constant ICBO VCB = 10 V, IE = 0 ...