Power Transistors
2SC5104
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
8.5...
Power Transistors
2SC5104
Silicon NPN triple diffusion planar type
For high breakdown
voltage high-speed switching
8.5±0.2
Unit: mm
3.4±0.3
6.0±0.2
1.0±0.1
■ Features
3.0–+00..24 4.4±0.5
14.4±0.5
10.0±0.3 1.5±0.1
High-speed switching
1.5–+00.4
High collector-base
voltage (Emitter open) VCBO
Wide safe operation area Satisfactory linearity of forward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the
/ printed circuit board, etc. of small electronic equipment
4.4±0.5 2.0±0.5
0 to 0.4
0.8±0.1
2.54±0.3 1.4±0.1 5.08±0.5
R = 0.5 R = 0.5
1.0±0.1
0.4±0.1
123
(8.5) (6.0) 1.3
■ Absolute Maximum Ratings TC = 25°C
e e) Parameter
Symbol Rating
Unit
(7.6) (1.5)
c e. d typ Collector-base
voltage (Emitter open) VCBO
500
V
n d stag tinue Collector-emitter
voltage (E-B short) VCES
500
V
a e cle con Collector-emitter
voltage (Base open) VCEO
400
V
lifecy , dis Emitter-base
voltage (Collector open) VEBO
7
V
n u ct ped Base current
IB
1.2
A
te tin Produ ed ty Collector current
IC
3
A
ur tinu Peak collector current
ICP
6
A
ing fo iscon Collector power dissipation
PC
30
W
in n llow d d Ta = 25°C
1.3
s fo lane Junction temperature
Tj
150
°C
a o lude e, p Storage temperature
Tstg −55 to +150 °C
(6.5)
1: Base 2: Collector 3: Emitter N-G1 Package
Note) Self-supported type package is also prepared.
c tinued inncance typ ■ Electrical Characteristics TC = 25°C ± 3°C
M is con inte Parameter...
