2SC5100
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908)
Application : Audio and General Pur...
2SC5100
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO VCEO VEBO IC IB PC Tj Tstg
160
V
120
V
6
V
8
A
3
A
75(Tc=25°C)
W
150
°C
–55 to +150
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
Ratings
ICBO
VCB=160V
10max
IEBO
VEB=6V
10max
V(BR)CEO
IC=50mA
120min
hFE
VCE=4V, IC=3A
50min∗
VCE(sat)
IC=3A, IB=0.3A
0.5max
fT
VCE=12V, IE=–0.5A
20typ
COB
VCB=10V, f=1MHz
200typ
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
Unit µA µA V
V MHz pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
(V)
(Ω)
IC
VBB1
VBB2
IB1
(A)
(V)
(V)
(A)
40
10
4
10
–5
0.4
IB2
ton
tstg
tf
(A)
(µs)
(µs)
(µs)
–0.4 0.13typ 3.50typ 0.32typ
0.8±0.2 5.5
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2 3.45 ±0.2
23.0±0.3 9.5±0.2
16.2
ø3.3±0.2 a b
3.0
1.6 3.3
5.45±0.1
1.75
2.15
1.05
+0.2 -0.1
5.45±0.1
0.65
+0.2 -0.1
0.8 3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Part No.
B C E b. Lot No.
DC Current Gain hFE
Collector Current IC(A) 350mA 200mA
I C– V CE Characteristics (Typical)
8
150mA
100mA
75mA
6
50mA
4
20mA 2
IB=10mA
0
0
1
2
3
4
Collector-Emitter
Voltage VCE(V)
Collector-Emitter Saturation
Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V) 8
2
1
IC=8A
4A
2A
0
0
0.2
0....