2SC5100

2SC5100 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO VCEO VEBO IC IB PC Tj Tstg 160 V 120 V 6 V 8 A 3 A 75(Tc=25°C) W 150 °C –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol Conditions Ratings ICBO VCB=160V 10max IEBO VEB=6V 10max V(BR)CEO IC=50mA 120min hFE VCE=4V, IC=3A 50min∗ VCE(sat) IC=3A, IB=0.3A 0.5max fT VCE=12V, IE=–0.5A 20typ COB VCB=10V, f=1MHz 200typ ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Unit µA µA V V MHz pF sTypical Switching Characteristics (Common Emitter) VCC RL (V) (Ω) IC VBB1 VBB2 IB1 (A) (V) (V) (A) 40 10 4 10 –5 0.4 IB2 ton tstg tf (A) (µs) (µs) (µs) –0.4 0.13typ 3.50typ 0.32typ 0.8±0.2 5.5 External Dimensions FM100(TO3PF) 15.6±0.2 5.5±0.2 3.45 ±0.2 23.0±0.3 9.5±0.2 16.2 ø3.3±0.2 a b 3.0 1.6 3.3 5.45±0.1 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 0.65 +0.2 -0.1 0.8 3.35 1.5 4.4 1.5 Weight : Approx 6.5g a. Part No. B C E b. Lot No. DC Current Gain hFE Collector Current IC(A) 350mA 200mA I C– V CE Characteristics (Typical) 8 150mA 100mA 75mA 6 50mA 4 20mA 2 IB=10mA 0 0 1 2 3 4 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) 3 I C– V BE Temperature Characteristics (Typical) (VCE=4V) 8 2 1 IC=8A 4A 2A 0 0 0.2 0....