2SC5099

2SC5099 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 120 V VCEO 80 V VEBO 6 V IC 6 A IB 3 A PC 60(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol ICBO IEBO Conditions VCB=120V VEB=6V Ratings Unit 10max µA 10max µA V(BR)CEO hFE VCE(sat) fT COB IC=50mA VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 80min 50min∗ 0.5max 20typ 110typ V V MHz pF ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (A) 30 10 3 10 –5 0.3 IB2 ton tstg tf (A) (µs) (µs) (µs) –0.3 0.16typ 2.60typ 0.34typ External Dimensions FM100(TO3PF) 15.6±0.2 5.5±0.2 3.45 ±0.2 0.8±0.2 5.5 23.0±0.3 9.5±0.2 16.2 ø3.3±0.2 a b 3.0 1.6 3.3 5.45±0.1 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 0.65 +0.2 -0.1 0.8 3.35 1.5 4.4 1.5 Weight : Approx 6.5g a. Part No. B C E b. Lot No. DC Current Gain hFE Collector Current IC(A) I C– V CE Characteristics (Typical) 6 200mA 150mA 100mA 80mA 50mA 4 30mA 2 20mA IB=10mA 0 0 1 2 3 4 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) 3 I C– V BE Temperature Characteristics (Typical) (VCE=4V) 6 Collector Current IC(A) 215˚25C˚(CC(aCsaeseTe...