TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5065
2SC5065
VHF to UHF Band Low Noise Amplifier Applications
...
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5065
2SC5065
VHF to UHF Band Low Noise Amplifier Applications
Low noise figure, high gain. NF = 1.1 dB, |S21e|2 = 12 dB (f = 1 GHz)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IB IC PC Tj Tstg
20
V
12
V
3
V
15
mA
30
mA
100
mW
125
°C
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Characteristics Transition frequency Insertion gain
Noise figure
Symbol
Test Condition
fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2)
NF (1)
NF (2)
VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 10 mA, f = 500 MHz VCE = 5 V, IC = 10 mA, f = 1 GHz VCE = 5 V, I...