2SC5018

Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 s Features q q 0.65 max. 1.0 1.0 High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings 500 400 7 1.5 0.8 1 150 –55 ~ +150 1cm2 Unit 0.45–0.05 0.45–0.05 +0.1 +0.1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 2.5±0.5 1 2 2.5±0.5 3 V V A A W ˚C ˚C 1.2±0.1 0.65 max. 0.1 0.45+ – 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board 2.5±0.1 V (HW type) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fill time (Ta=25˚C) Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 10mA VCE = 5V, IC = 300mA*1 IC = 100mA, IB = 10mA*1 IC = 100mA, IB = 10...