2SC5013

DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Small Package High Gain Bandwidth Product (fT = 10 GHz TYP.) Low Noise, High Gain Low Voltage Operation 0.3 +0.1 –0.05 PACKAGE DIMENSIONS in millimeters 2.1 ± 0.2 1.25 ± 0.1 0.3 +0.1 –0.05 (LEADS 2, 3, 4) (1.3) 2.0 ± 0.2 0.60 0.65 ORDERING INFORMATION PART NUMBER 2SC5013-T1 XYZ QUANTITY 3 Kpcs/Reel. PACKING STYLE Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape. (1.25) 2 3 1 4 0.4 +0.1 –0.05 0.9 ± 0.1 0.3 2SC5013-T2 3 Kpcs/Reel. 0 to 0.1 * Please contact with responsible NEC person, If you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC5013) PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 10 1.5 35 150 150 –65 to +150 V V V mA mW ˚C ˚C Caution; Electrostatic Sensitive Device. Document No. P10401EJ2V0DS00 (2nd edition) (Previous No. TD-2413) Date Published July 1995 P Printed in Japan © 0.3 +0.1 –0.05 0.15 +0.1 –0.05 1993 2SC5013 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Collector Cutoff ...