2SC5010

DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique. FEATURES Low Voltage Use. High fT Low Cre Low NF : 12.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz) : 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz) 2 1.6 ± 0.1 1.0 0.2 +0.1 –0 0.5 0.3 +0.1 –0 0.15 +0.1 –0.05 PACKAGE DIMENSIONS in milimeters 1.6 ± 0.1 0.8 ± 0.1 High |S21e|2 : 8.5 dB TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz) Ultra Super Mini Mold Package. 0.5 ORDERING INFORMATION PART NUMBER 2SC5010 2SC5010-T1 3 1 QUANTITY 50 pcs/Unit. 3 kpcs/Reel. PACKING STYLE Embossed tape 8 mm wide. Pin3(Collector) face to perforation side of the tape. 0.75 ± 0.05 0.6 * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 9 6 2 30 125 150 –6...