2SC4988

2SC4988 Silicon NPN Epitaxial ADE-208-004 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 8.5 GHz Typ High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4988 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 9 1.5 100 800* 150 –55 to +150 1 Unit V V V mA mW °C °C 1. This value is allowed when using the alumina ceramics board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is “FR”. I EBO hFE Cob fT PG NF Min 15 — — — 50 — 5.5 7.5 — Typ — — — — 120 1.1 8.5 10.5 1.3 Max — 1 1 10 250 1.6 — — 2.5 pF GHz dB dB Unit V µA mA µA Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 9 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate caut...