2SC4960A

Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit: mm s Features q q q 0.7 q 21.0±0.5 15.0±0.2 High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 900 900 900 800 900 7 2 1 0.3 40 3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 15.0±0.3 11.0±0.2 5.0±0.2 3.2 φ3.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage 2SC4960 2SC4960A VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg Symbol 16.2±0.5 12.5 3.5 Solder Dip 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 Collector to emitter voltage Collector to 2SC4960 emitter voltage 2SC4960A Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SC4960 2SC4960A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 IC = 1mA, IB = 0 VCE = 5V, IC = 0.05A VCE = 5V, IC = 0.5A IC = 0.2A, IB = 0.04A IC = 0.2A, IB = 0.04A VCE = 10V, IC = 0.05A, f = 1MHz IC = 0.2A, IB1 = 0.04A, IB2 = – 0.08A, VCC = 250V 4 1 3 1 800 900 6 ...