2SC4954

DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES Low Noise, High Gain Low Voltage Operation Low Feedback Capacitance Cre = 0.3 pF TYP. PACKAGE DIMENSIONS in millimeters 2.8±0.2 0.4 –0.05 +0.1 1.5 0.65 –0.15 +0.1 ORDERING INFORMATION 0.95 0.95 PART NUMBER 2SC4954-T1 QUANTITY 3 Kpcs/Reel. PACKING STYLE Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape. Embossed tape 8 mm wide. Pin1 (Emitter), Pin2 (Base) face to perforation side of the tape. 2.9±0.2 2 3 2SC4954-T2 3 Kpcs/Reel. Marking 0.3 * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4954) 1.1 to 1.4 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 9 6 2 10 60 150 –65 to +150 V V V mA mW ˚C ˚C PIN CONNECTIONS 1. Emitter 2. Base 3. Collector The information in this document is subject to change without notice. Caution; Electrostatic Sensitive Device. Document No. P10376EJ2V0DS00 (2nd edition) (Previous No. TD-2405) Date Published July 1995 P Printed in Japan 0 to 0.1 © 0.16 –0.06 +0.1 +0.1 1 0.4 –0.05 1993 2SC4954 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current...