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2SC4934

HITACHI

NPN Transistor

2SC4934 Silicon NPN Epitaxial Application High voltage amplifier TO–126FM Ordering Information hFE 1 2 3 ————————...


HITACHI

2SC4934

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2SC4934 Silicon NPN Epitaxial Application High voltage amplifier TO–126FM Ordering Information hFE 1 2 3 ———————————————————— 2SC4934D 2SC4934E 250 to 500 400 to 800 1. Emitter 2. Collector 3. Base ———————————————————— ———————————————————— Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC PC PC*1 Tj Tstg Rating 120 120 5 0.2 1.5 8 150 –55 to +150 Unit V V V A W W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— www.DataSheet4U.com 2SC4934 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE hFE VBE VCE(sat) fT Cob Min 120 Typ — Max — Unit V Test Conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 80 V, IE = 0 VCE = 5 V, IC = 10 mA V VCE = 5 V, IC = 10 mA IC = 200 mA, IB = 20 mA VCE = 10 V, IE = ...




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