2SC4926
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product fT = 11...
2SC4926
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product fT = 11 GHz Typ High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
MPAK-4
2
3 1 4
1. Collector 2. Emitter 3. Base 4. Emitter
2SC4926
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 150 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown
voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product S21 Parameter Power gain Noise figure Note: Marking is “YD–”. I EBO hFE Cob fT S 21 PG NF Min 15 — — — 50 — 8.0 — 13.5 — Typ — — — — 120 0.6 11.0 16 16.5 1.1 Max — 10 1 10 250 1.1 — — — 2.0 pF GHz dB dB dB Unit V µA mA µA Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 1000 MHz VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz
Attention: This is electrostatic sensitive device.
2
2SC4926
DC Current Transfer Ratio vs. Collector Current 200 DC Current Transfer Ratio h FE VCE = 5V
Maximum Collector Di...