2SC4920

Ordering number:EN4766 NPN Epitaxial Planar Silicon Transistor 2SC4920 Muting Circuit, Driver Applications Features · High DC current gain. · On-chip bias resistance (R1=4.7kΩ, R2=4.7kΩ). · Very small-sized package permitting 2SC4920- applied sets to be made smaller and slimmer. · Small ON resistance. Package Dimensions unit:mm 2106A [2SC4920] 0.3 0.75 0.6 0 to 0.1 0.4 0.8 0.4 1.6 0.1max 0.5 0.5 1.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Input Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO VIN IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance * Characteristic of the constituent transistor. Marking : EA Symbol Conditions ICBO ICEO IEBO hFE fT* Cob* VCB=20V, IE=0 VCE=15V, IB=0 VEB=5V, IC=0 VCE=2V, IC=20mA VCE=5V, IC=10mA VCB=10V, f=1MHz 0.2 0.1 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Ratings 25 20 10 18 100 200 20 150 150 –55 to +150 Unit V V V V mA mA mA mW ˚C ˚C Ratings min typ 410 532 80 240 1.4 max 0.1 0.5 760 Unit µA µA µA MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life...