Ordering number:EN4138
NPN Triple Diffused Planar Silicon Transistor
2SC4891
Ultrahigh-Definition CRT Display Horizonta...
Ordering number:EN4138
NPN Triple Diffused Planar Silicon Transistor
2SC4891
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High reliability (Adoption of HVP process).
· High breakdown
voltage (VCBO=1500V). · Adoption of MBIT process.
Package Dimensions
unit:mm 2039D
[2SC4891]
16.0 3.4
5.6 3.1
5.0 8.0 22.0
2.0
21.0 4.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector-to-Emitter Sastain
Voltage Emitter Cutoff Current Collector-to-Emitter Saturation
Voltage Base-to-Emitter Saturation
Voltage
Symbol
Conditions
ICES ICBO VCEO(sus) IEBO VCE(sat) VBE(sat)
VCE=1500V, RBE=0 VCB=800V, IE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=12A, IB=3.0A IC=12A, IB=3.0A
2.8 2.0 1.0
123
5.45 5.45
3.5 20.4
2.0
0.6
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML
Ratings 1500 800 6 15 35 3.0 75 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
800
max 1.0 10
1.0 5
1.5
Unit
mA µA V mA V V
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-suppo...