2SC4880

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4880 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 900 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 20 W 100 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4880 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2.5A ICEO Collector Cutoff Current VCE= 1700V ; RBE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE DC current gain IC= 1A ; VCE= 5V MIN TYP. MAX UNIT 900 V 5.0 V 1.5 V 0.5 mA 0.1 mA 8 40 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informa...