2SC4867

Ordering number:EN4856 NPN Epitaxial Planar Silicon Transistor 2SC4867 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. 0.425 Package Dimensions unit:mm 2059B [2SC4867] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure ICBO IEBO hFE fT Cob | S21e |2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=15mA VCE=5V, IC=15mA VCB=10V, f=1MHz VCE=5V, IC=15mA, f=1GHz VCE=5V, IC=5mA, f=1GHz * : The 2SC4867 is classified by 15mA hFE as follows : 60 3 120 Marking : GN hFE rank : 3, 4, 5 90 4 180 135 5 270 0.3 0.6 0.9 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Ratings 16 8 1.5 50 150 150 –55 to +150 Unit V V V mA mW ˚C ˚C Ratings min typ 60* 9.0 0.6 10 13 1.2 max 1.0 10 270* 1.1 2.5 Unit µA µA GHz pF dB dB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of...