DatasheetsPDF.com

2SC4842 Datasheet

Part Number 2SC4842
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC4842 Datasheet2SC4842 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4842 2SC4842 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 14dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 12 3 80 40 100 125 -55~125 .

  2SC4842   2SC4842






Part Number 2SC4849
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC4842 Datasheet2SC4849 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4849 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .

  2SC4842   2SC4842







Part Number 2SC4849
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC4842 Datasheet2SC4849 Datasheet (PDF)

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4849 DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High switching speed ·Wide safe operating area APPLICATIONS ·For power supply PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage C.

  2SC4842   2SC4842







Part Number 2SC4848
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC4842 Datasheet2SC4848 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4848 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .

  2SC4842   2SC4842







Part Number 2SC4847
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC4842 Datasheet2SC4847 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4847 DESCRIPTION ·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Em.

  2SC4842   2SC4842







Part Number 2SC4844
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC4842 Datasheet2SC4844 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4844 2SC4844 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 9.5dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IB IC PC Tj Tstg Rating 20 10 1.5 7 15 100 125 -55~12.

  2SC4842   2SC4842







NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4842 2SC4842 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 14dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 12 3 80 40 100 125 -55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-2K1A Weight: 0.006 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ïS21eï2 (1) ïS21eï2 (2) NF (1) NF (2) VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 5 mA, f = 1 GHz Min Typ. Max Unit 5 7 ¾ GHz ¾ 10.5 19.5 14 ¾ ¾ dB ¾1¾ dB ¾ 1.1 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz (Note) ¾ ¾ 30 ¾ ¾ ¾ ¾ ¾ 0.8 0.55 1 1 250 ¾ 1 mA mA pF pF Note: Cre is measured by 3 terminal method with capacitance bridge. 1 2003-03-19 Marking 2SC4842 2 2003-03-19.


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)