2SC4807

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4807 DESCRIPTION ·High Gain-Bandwidth Product fT= 4.4 GHz TYP. ·High Output Power 1 dB Power compression point Pcp = 24 dBm TYP. @ VCE = 5V , IC = 100 mA , f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF ~ UHF wide band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.2 A 0.8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4807 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA; IE= 0 ICBO Collector Cutoff Current VCB= 15V; IE= 0 ICEO Collector Cutoff Current VCE= 15V; RBE= ∞ IEBO Emitter Cutoff Current VEB= 2V; IC= 0 hFE DC Current Gain IC= 100mA ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 100mA ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 5V; f= 1.0MHz PG Power Gain IC= 100mA ; VCE= 5V; f= 900MHz NF Noise Figure IC= 20mA ; VCE= 5V; f= 900MHz MIN TYP. MAX UNIT 20 V 1 μA 1 μA 10 μA 50 250 3.0 4.4 GHz 2...