2SC4796

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4796 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1700V(Min) ·High Switching Speed ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 900 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 2.5 W 50 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4796 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICES Collector Cutoff Current VCE= 1700V; RBE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC current gain IC= 1A; VCE= 5V MIN TYP. MAX UNIT 900 V 5.0 V 1.5 V 0.5 mA 0.1 mA 10 35 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any t...