isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4762
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Mi...
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4762
DESCRIPTION ·High Breakdown
Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation
Voltage ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Horizontal deflection output for medium resolution display.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1500
V
VCEO
Collector-Emitter
Voltage
600
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current- Continuous
±7
A
ICP
Collector Current-Pulse
±14
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3.5
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4762
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 300mA ; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 1500V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
VECF
C-E Diode Forward
Voltage
IF= 5A
fT
Current-Gain—Bandwidth Product
IC= 0.1A ; V...