2SC4738F

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738F 2SC4738F Audio Frequency General Purpose Amplifier Applications · High voltage and high current: VCEO = 50 V, IC = 150 mA (max) · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · High hFE: hFE = 120~400 · Complementary to 2SA1832F · Small package Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 150 30 100 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance ICBO VCB = 60 V, IE = 0 IEBO VEB = 5 V, IC = 0 hFE (Note) VCE = 6 V, IB = 2 mA VCE (sat) IC = 100 mA, IB = 10 mA fT VCE = 10 V, IC = 1 mA Cob VCB = 10 V, IE = 0, f = 1 MHz Note: hFE classification Y (Y): 120~240, GR (G): 200~400 ( ) marking symbol Marking JEDEC ― JEITA ― TOSHIBA 2-2HA1A Weight: 2.3 mg (typ.) Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA 120 ¾ 400 ¾ 0.1 0.25 V 80 ¾ ¾ MHz ¾ 2.0 3.5 pF 1 2003-03-27 2SC4738F 2 2003-03-27 2SC4738F RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its ...