2SC4703

NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power mini mold (SOT-89). FEATURES Low distortion, low voltage: IM2 = 55 dBc TYP., IM3 = 76 dBc TYP. @ VCE = 5 V, IC = 50 mA, VO = 105 dBV/75 Large Ptot : Ptot = 1.8 W (Mounted on double-sided copper-clad 16 cm  0.7 mm (t) ceramic substrate) 2 Small package : 3-pin power mini mold package ORDERING INFORMATION Part Number NE46234-AZ 2SC4703 NE46234-T1-AZ 2SC4703-T1 Quantity 25 pcs (Non reel) 1 kpcs/reel Supplying Form 12 mm wide embossed taping Collector face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 25 12 2.5 150 1.8 150 65 to +150 2 Unit V V V mA W C C Tj Tstg Note Mounted on double-sided copper-clad 16 cm  0.7 mm (t) ceramic substrate Document No. PU10339EJ01V1DS (1st edition) Date Publ...