2SC4694

Ordering number:EN3485 NPN Epitaxial Planar Silicon Transistor 2SC4694 Low-Frequency General-Purpose Amplifier, Muting Applications Features · Adoption of MBIT process. · High DC current gain. · High VEBO (VEBO≥25V). · High reverse hFE (150 typ). · Small ON resistance [Ron=1Ω (IB=5mA)]. · Very small-sized package permitting 2SC4694- applied sets to be made small and slim. 0.425 Package Dimensions unit:mm 2059B [2SC4694] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Marking :WT Symbol Conditions ICBO IEBO hFE1 fT Cob VCB=40V, IE=0 VEB=20V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=10mA VCB=10V, f=1MHz 0.3 0.6 0.9 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Ratings 50 20 25 500 800 100 150 150 –55 to +150 Unit V V V mA mA mA mW ˚C ˚C Ratings min typ 300 250 3.6 max 0.1 0.1 1200 Unit µA µA MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support syste...