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2SC4689
NPN Transistor
Description
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown
Voltage
- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation
Voltage
- : VCE(sat)= 2.0V(Max)@ IC= 6A ·Complement to Type 2SA1804 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recom...
INCHANGE
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