TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4682
Strobe Flash Applications Medium Power Amplifier App...
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4682
Strobe Flash Applications Medium Power Amplifier Applications
2SC4682
Unit: mm
Excellent hFE linearity: hFE (1) = 800 to 3200 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 500 (typ.) (VCE = 1 V, IC = 3 A)
Low saturation
voltage: VCE (sat) = 0.5 V (max) (IC = 3 A, IB = 30 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base
voltage
Collector-emitter
voltage
Emitter-base
voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO VCES V (BR) CEO VEBO
IC ICP IB PC Tj Tstg
Rating
30 30 15 6 3 6 0.8 900 150 −55 to 150
Unit V
V
V
A
A mW °C °C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown
voltage
DC current gain
Collector-emitter saturation
voltage Base-emitter
voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE
fT Cob
VCB = 30 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 0.5 A VCE = 1 V, IC = 3 A IC = 3 A, IB = 30 mA VCE = 1 V, IC = 3 A VCE = 1 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― 1 µA
― ― 10 µA
15 ― ―
V
800 ― 3200
300 500
―
― 0.25 0.5
V
― 0.85 1.2
V
― 150 ― MHz
― 30 ― pF
1 2004-07-26
Marking
C4682
Part No. (or abbreviation c...