2SC4675

Ordering number:EN3708 NPN Epitaxial Planar Silicon Transistor 2SC4675 20V/8A Switching Applications Features · Adoption of MBIT process. · Low saturation voltage. · Fast switching speed. · Large current capacity. Package Dimensions unit:mm 2042B [2SC4675] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP IB PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C 2.4 4.8 Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE1 hFE2 * : The 2SC4675 is classified by 500mA hFE as follows. 100 R 200 140 S 280 200 T 400 VCB=20V, IE=0 VEB=4V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=6A 1.7 0.7 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML Ratings 30 20 5 8 12 1.5 1.5 10 150 –55 to +150 Unit V V V A A A W W ˚C ˚C Ratings min typ 100* 70 max 1 1 400* Unit µA µA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material da...